Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-08-02
2009-10-13
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257SE21372
Reexamination Certificate
active
07601570
ABSTRACT:
A method for producing a microelectronic device having one or more Si1−zGezbased semiconductor wire(s) (with 0<z≦1), including:a) thermal oxidation of at least a portion of a Si1−xGex-based semiconductor layer (with 0<x<1) resting on a support, so as to form at least one Si1−yGey-based semiconductor zone (with 0<y<1 and x<y),b) lateral thermal oxidation of the sides of one or more so-called semiconductor connection blocks from the Si1−yGey-based semiconductor zone and connecting a semiconductor block intended to form a transistor source region and another block intended to form a transistor drain region so as to reduce the semiconductor connection blocks in at least one direction parallel to the main plane of the support and to form one or more Si1−zGez-based semiconductor wire(s) (with 0<y<1 and y<z).
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Coleman W. David
Commissariat a l''Energie Atomique
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Shook Daniel
LandOfFree
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