Method for producing a connection electrode for two...

Details Method for producing a connection electrode for two... Method for producing a connection electrode for two...

2006-09-26

2010-12-14

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21159

Reexamination Certificate

active

07851349

ABSTRACT:
A method for producing a connection electrode for a first semiconductor zone and a second semiconductor zone includes producing a trench extending through the first semiconductor zone right into the second semiconductor zone in such a way that the first semiconductor zone is uncovered at sidewalls of the trench and the second semiconductor zone is uncovered at least at a bottom of the trench. The method also includes applying a protective layer to a first one of the first and second semiconductor zones in the trench, and producing a first connection zone in the second of the two semiconductor zones, which is not covered by the protective layer. The method further includes depositing an electrode layer at least onto the sidewalls and the bottom of the trench for the purpose of producing the connection electrode.

REFERENCES:
patent: 4992390 (1991-02-01), Chang
patent: 6737323 (2004-05-01), Mo
patent: 6888196 (2005-05-01), Kobayashi
patent: 2001/0001494 (2001-05-01), Kocon
patent: 2003/0186507 (2003-10-01), Henninger et al.
patent: 102 14 175 (2003-10-01), None
patent: 103 61 715 (2005-08-01), None
patent: 102004047237 (2006-06-01), None
patent: 102004057237 (2006-06-01), None

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