Method for producing a conductive oxide pattern

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156656, 156667, 20419229, 427309, B44C 122, C23F 100

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active

052640779

ABSTRACT:
A conductive oxide film is formed on a substrate at a low temperature. The formed conductive oxide film is not very dense because of the low temperature. Therefore the formed conductive oxide film can easily be etched by an etchant having a weak etching capability. And by the etching a pattern of the formed conductive oxide film is produced. The patterned conductive oxide film is oxidized at a temperature in the range of 100.degree.-400.degree. C. In this way a conductive oxide pattern is produced in a shorter time in the method of the present invention than in a conventional method and the conductive oxide pattern produced by the method of the present invention has the almost same resistivity as the conductive oxide pattern produced by the conventional method and has an improved pattern edge and an improved reproducibility.

REFERENCES:
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Thin Solid Films, vol. 15, No. 2, Mar. 1989, Lausanne CH, pp. 151-162; M. Venkatesan et al.: "Indium tin oxide thin films for metallization in microelectronic devices".
Journal of Vacuum Science and Technology: Part A. vol. 5, No. 4, Jul. 1987, New York, US pp. 1952-1955; S. Yamamoto et al.: "Properties of Sn-doped In203 by reactive magnetron sputtering and subsequent annealing".

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