Method for producing a component comprising at least one...

Details Method for producing a component comprising at least one... Method for producing a component comprising at least one...

2008-04-22

2008-04-22

Toledo, Fernando L (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S065000, C423S349000

Reexamination Certificate

active

07361592

ABSTRACT:
The method successively comprises production, on a substrate, of a stack of layers comprising at least one first layer made from germanium and silicon compound initially having a germanium concentration comprised between 10% and 50%. The first layer is arranged between second layers having germanium concentrations comprised between 0% and 10%. Then a first zone corresponding to the germanium-based element and having at least a first lateral dimension comprised between 10 nm and 500 nm is delineated by etching in said stack. Then at least lateral thermal oxidization of the first zone is performed so that a silica layer forms on the surface of the first zone and that, in the first layer, a central zone of condensed germanium forms, constituting the germanium-based element.

REFERENCES:
patent: 5917981 (1999-06-01), Kovacic et al.
patent: 6423632 (2002-07-01), Samavedam et al.
patent: 7205210 (2007-04-01), Barr et al.
patent: 2004/0115900 (2004-06-01), Huang et al.
patent: 2004/0219767 (2004-11-01), Arena et al.
patent: 2005/0156268 (2005-07-01), Chu
patent: 2005/0181549 (2005-08-01), Barr et al.
patent: 2005/0218453 (2005-10-01), Langdo et al.
patent: 2005/0224875 (2005-10-01), Anderson et al.
patent: 2007/0023756 (2007-02-01), Anderson et al.
patent: 2 852 144 (2004-09-01), None
patent: WO 2004/001810 (2003-12-01), None
Tezuka et al., “High-Mobility Strained SiGe-on-Insulator pMOSFETs With Ge-Rich Surface Channels Fabricated by Local Condensation Technique,” IEEE Electron Device Letters, vol. 26, No. 4, Apr. 2005, pp. 243-245.
Nakaharai et al., “Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique,” Applied Physics Letters, vol. 83, No. 17, Oct. 2003, pp. 3516-3518.

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