Method for producing a coating layer for semiconductor technolog

Details Method for producing a coating layer for semiconductor technolog Method for producing a coating layer for semiconductor technolog

1987-03-16

1988-08-16

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156644, 156646, 156655, 156657, 1566591, 156668, 20419237, 252 791, 437157, 437228, 437238, B44C 122, C03C 1500, C03C 2506

Patent

active

047642491

ABSTRACT:
A coating layer (2) for semiconductor technology having an edge contour which has a wedge-shaped cross section is produced by predominantly anisotropic dry etching of the coating layer (2) through a mask (4) disposed in front of the coating layer (2) at a finite mask distance (A).
The coating layer (2) etched in this manner is especially well suited as an insulating substrate for a field plate in the edge region of a P-N junction emerging at the surface and also as implantation mask for producing a P-N junction with lateral doping gradients.

REFERENCES:
patent: 4256532 (1981-03-01), Magdo et al.
patent: 4461672 (1984-07-01), Musser
patent: 4484978 (1984-11-01), Keyser
patent: 4661203 (1987-04-01), Smith et al.
Rothman et al., "Process for Forming Tapered Vias in SiO.sub.2 by Reactive Ion Etching", Extended Abstracts, vol. 80-1 (1980 May), Abstract No. 110, pp. 289-290.
Koste et al., "Via Profiling by Plasma Etching with Varying Ion Energy", IBM Technical Disclosure Bulletin, vol. 22, No. 7, Dec. 1979, pp. 2737-2738.
Tove, "Methods of Avoiding Edge Effects on Semiconductor Diodes", Review Article, J. Phys. D: Appl. Phys., 15(1982), pp. 517-536.
Tihanyi, "Integrated Power Devices", IEDM-82, pp. 6-10.
Stengl et al., "Variation of Lateral Doping-A New Concept to Avoid High Voltage Breakdown of Planar Junctions", IEDM-85, pp. 154-157.
Ephrath, "Dry Etching for VLSI-A Review", J. Electrochem. Soc.: Reviews and News, Mar. 1982, vol. 129, No. 3, pp. 62C-65C.

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