Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-10-23
2007-10-23
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S677000, C438S678000, C438S687000, C134S003000
Reexamination Certificate
active
11039967
ABSTRACT:
A substrate processing method can securely form a metal film by electroless plating on an exposed surface of a base metal, such as interconnects, with increased throughput and without the formation of voids in the base metal. The substrate processing method includes: cleaning a surface of a substrate having a base metal formed in the surface with a cleaning solution comprising an aqueous solution of a carboxyl group-containing organic acid or its salt and a surfactant as an additive; bringing the surface of the substrate after the cleaning into contact with a processing solution comprising a mixture of the cleaning solution and a solution containing a catalyst metal ion, thereby applying the catalyst to the surface of the substrate; and forming a metal film by electroless plating on the catalyst-applied surface of the substrate.
REFERENCES:
patent: 5167992 (1992-12-01), Lin et al.
patent: 5405656 (1995-04-01), Ishikawa et al.
patent: 6514921 (2003-02-01), Kakizawa et al.
patent: 6562657 (2003-05-01), Lin
patent: 6593224 (2003-07-01), Lin
patent: 6653170 (2003-11-01), Lin
patent: 6660626 (2003-12-01), Lin
patent: 7060618 (2006-06-01), Inoue et al.
patent: 11-124680 (1999-05-01), None
patent: 2003-34876 (2003-02-01), None
patent: 2003-193246 (2003-07-01), None
patent: 2003-224128 (2003-08-01), None
Fukunaga Akira
Fukunaga Yukio
Nishioka Yukiko
Owatari Akira
Sahoda Tsuyoshi
Duong Khanh
Ebara Corporation
Wenderoth , Lind & Ponack, L.L.P.
Wilczewski M.
LandOfFree
Method for processing substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for processing substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for processing substrate will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3892355