Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-10-02
2007-10-02
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21006, C438S785000
Reexamination Certificate
active
11141019
ABSTRACT:
A method for depositing a metal compound film on the wafer by using a vapor phase deposition apparatus100, including: forming a thin film on the wafer in an interior of the vapor phase deposition apparatus100by introducing a source gas for the metal compound film containing Hf or Zr; unloading the wafer having the metal compound film formed thereon from the interior of the vapor phase deposition apparatus100; introducing a reactive gas in the interior of the vapor phase deposition apparatus100to immobilize the unreacted organic compound180derived from the source gas remained in the interior of the vapor phase deposition apparatus100; loading another wafer in the interior of the vapor phase deposition apparatus100; and depositing metal compound film on another wafer by further introducing the source gas in the interior of the vapor phase deposition apparatus100, in the condition that the unreacted organic compound180exists therein as an immobilized form, is presented.
REFERENCES:
patent: 5705225 (1998-01-01), Dornfest et al.
patent: 6554910 (2003-04-01), Sandhu et al.
patent: 2000-277459 (2000-10-01), None
patent: 2002-134488 (2002-05-01), None
Everhart Caridad
NEC Electronics Corporation
Sughrue & Mion, PLLC
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