Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-08-15
2008-10-28
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S687000, C438S597000, C257SE21477, C716S030000
Reexamination Certificate
active
07442637
ABSTRACT:
A method for processing IC designs for different metal BEOL processes is provided for enabling fabricating using a metal fabrication process an IC originally having a backend design for a different metal fabrication process. The method first determines layer constructions of an original design of an IC for a first metal backend process, and, based on the layer constructions of the original design of the IC, constructs primitive layer constructions of a target design of the IC for a second metal backend process. The method then tunes an effective dielectric constant of a dielectric layer of the target design to match an associated capacitance of the target backend design with a corresponding capacitance of the original backend design. The method can be used to convert a backend design of an IC from an old metal process (such as Al process) to a new metal process (such as Cu process), without redesigning the IC for the new metal BEOL fabrication process.
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Su Jiannong
Yang Simon Shi-ning
Zhang Jian
Chartered Semiconductor Manufacturing Ltd
Fourson George
Horizon IP Pte Ltd
Parker John M
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