Method for processing a wafer and apparatus for performing...

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With heating or cooling means for apparatus part other than...

Reexamination Certificate

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Details

C156S345520, C156S345530, C118S724000

Reexamination Certificate

active

06869500

ABSTRACT:
Disclosed are a method and an apparatus for processing a wafer in manufacturing a semiconductor device and a method and an apparatus for etching a material formed on the wafer, wherein first and second cooling parts adjust an ambient temperature near a plurality of wafers to a first temperature, the wafers are processed by introducing a reaction gas at the first temperature, then, a heating part rapidly raises the temperature of the atmosphere near the wafers from the first temperature to the second temperature to partially separate by-products produced during the processing, the second temperature is maintained to separate most of the by-products from the wafers, and the processing steps are implemented in-situ within the same space. Accordingly, a native oxide layer formed on several wafers can be etched and the reaction by-products can be removed in-situ in the same chamber so productivity is improved.

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