Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2006-09-19
2006-09-19
Deo, Duy-Vu N (Department: 1765)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C438S424000, C438S690000
Reexamination Certificate
active
07109091
ABSTRACT:
A method for processing a substrate to produce a structure, for example an insulating trench, uses a lithographic mask exposure process. Conventionally, the optical resolution limit prescribes the minimum width for any structure that can be produced. The method produces structures having a width less than the optical resolution limit on raised regions of the semiconductor substrate. Use is made of spacer technology, before the application of which the method first involves the local level ratios on the semiconductor substrate being reversed by trench etching, trench filling and subsequent back-etching of the trench interspace. The method allows insulating trenches of any narrow width between zero and the respective optical resolution limit to be produced on locally raised surface regions of the substrate.
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Deo Duy-Vu N
Greenberg Laurence A.
Locher Ralph E.
Stemer Werner H.
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