Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-12-21
2010-02-02
Monbleau, Davienne (Department: 2893)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S631000, C438S637000, C438S621000, C257SE21585
Reexamination Certificate
active
07655563
ABSTRACT:
The invention relates to a semiconductor circuit arrangement having a semiconductor substrate, a first doping region, a second doping region, a connection doping region, an insulation layer and an electrically conductive structure which is to be planarized, it being possible for the charge carriers formed during a planarization step to be reliably dissipated, and for dendrite formation to be prevented, by a discharge doping region formed in the first and second doping regions.
REFERENCES:
patent: 5804864 (1998-09-01), Akiyama
patent: 6150269 (2000-11-01), Roy
patent: 6310365 (2001-10-01), Chen
patent: 6720622 (2004-04-01), Yu
patent: 2002/0142576 (2002-10-01), Noguchi et al.
patent: 0 759 638 (1997-02-01), None
patent: 1 162 664 (2001-12-01), None
A Review of RESURF Technology, ISPSO, May 2000, pp. 11-18.
International Search Report for PCT/DE03/03934.
Brase Gabriela
Ostermayr Martin
Ruderer Erwin
Brinks Hofer Gilson & Lione
Infineon - Technologies AG
Monbleau Davienne
Nguyen Dilinh P
LandOfFree
Method for preventing the formation of dentrites in a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for preventing the formation of dentrites in a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for preventing the formation of dentrites in a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4212127