Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2006-06-27
2006-06-27
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S483000, C438S967000
Reexamination Certificate
active
07067400
ABSTRACT:
A method of forming a substantially relaxed SiGe-on-insulator substrate in which the consumption of the sidewalls of SiGe-containing island structures during a high temperature relaxation annealing is substantially prevented or eliminated is provided. The method serves to maintain the original lateral dimensions of the patterned SiGe-containing islands, while providing a uniform and homogeneous Ge fraction of the islands that is independent of each island size. The method includes forming an oxidation mask on at least sidewalls of a SiGe-containing island structure that is located on a barrier layer that is resistant to Ge diffusion. A heating step is then employed to cause at least relaxation within the SiGe-containing island structure. The presence of the oxidation mask substantially prevents consumption of at least the sidewalls of the SiGe-containing island structure during the heating step.
REFERENCES:
patent: 6727550 (2004-04-01), Tezuka et al.
patent: 2004/0195624 (2004-10-01), Liu et al.
patent: 2004/0235264 (2004-11-01), Forbes
patent: 2004/0235274 (2004-11-01), Kurita et al.
patent: 2004/0248354 (2004-12-01), Chidambaram et al.
patent: 2005/0054175 (2005-03-01), Bauer
patent: 2005/0093021 (2005-05-01), Ouyang et al.
Bedell Stephen W.
Mocuta Anda C.
Estrada Michelle
Scully , Scott, Murphy & Presser, P.C.
Trepp Robert M.
LandOfFree
Method for preventing sidewall consumption during oxidation... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for preventing sidewall consumption during oxidation..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for preventing sidewall consumption during oxidation... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3687355