Method for preventing corrosion of a metallic layer of a semicon

Details Method for preventing corrosion of a metallic layer of a semicon Method for preventing corrosion of a metallic layer of a semicon

1998-11-23

2000-10-17

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438710, 438714, 438715, H01L 213065

Patent

active

061331554

ABSTRACT:
The present invention provides a method for preventing corrosion of an aluminum-containing metallic layer having a plurality of trenches on the surface of a semiconductor chip caused by chlorine atoms residing on side walls of the trenches of the metallic layer after a trench etching process. The method comprises the following steps: (1) removing the photo resistance layer on top of the metallic layer by ashing at temperatures between 178.degree. C. and 200.degree. C. after a trench etching process, (2) using an acidic solution comprising hydroxylamine (NH.sub.2 OH), hydroquinone C.sub.6 H.sub.4 (OH).sub.2, monoethanolanine (HOCH.sub.2 CH.sub.2 NH.sub.2) and water to wash off residues on the surface of the semiconductor chip, and (3) heating the semiconductor chip for a predetermined time period at temperatures between 200.degree. C. and 250.degree. C. so as to completely dissipate the chlorine atoms resided on the side walls of the metallic layer for preventing recurrent corrosion of an aluminum-containing metallic layer.

REFERENCES:
patent: 5667630 (1997-09-01), Lo
patent: 5840203 (1998-11-01), Peng
patent: 5902780 (1999-05-01), Lee

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