Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Patent
1999-08-30
2000-07-18
Niebling, John F.
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
438783, 438624, H01L 21302
Patent
active
060907258
ABSTRACT:
A method for preventing bubble defects in borophosphosilicate glass (BPSG) film is provided. A wafer for depositing borophosphosilicate glass (BPSG) film is loaded in deposition chamber. After the wafer is properly positioned, the wafer is heated to a predetermined temperature. A process gas is introduced from the gas distribution system to the deposition chamber. A selected pressure of the deposition chamber is set and maintained throughout deposition process. After deposition of the BPSG film, the wafer is loaded out the chamber. Subsequently, helium gas is introduced to purge the liquid injection valve and delivery path. After pumping out the purge gas, the another wafer is then loaded in the chamber for depositing BPSG film.
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patent: 5314845 (1994-05-01), Lee et al.
patent: 5354387 (1994-10-01), Lee et al.
patent: 5814377 (1998-09-01), Robles et al.
Lin Ching-Shun
Sue Mike W. J
Wu Chih-Ta
Yang Yi-Chuan
Ghyka Alexander G.
Mosel Vitelic Inc.
Niebling John F.
Villacorta Gilberto M.
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