Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2011-03-22
2011-03-22
Culbert, Roberts (Department: 1716)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S710000, C438S745000
Reexamination Certificate
active
07910484
ABSTRACT:
A method of forming a TEOS oxide layer over an nitrogen doped silicon carbide or nitrogen doped hydrogenated silicon carbide layer formed on a substrate. The method includes forming the nitrogen doped silicon carbide or nitrogen doped hydrogenated silicon carbide layer on a top surface and a top side beveled edge proximate to the top surface of a substrate; removing or preventing formation of a carbon-rich layer on a bottom side bevel edge region proximate to a bottom surface of the substrate or converting the carbon-rich layer to nitrogen doped silicon carbide or nitrogen doped hydrogenated silicon carbide; and forming the TEOS oxide layer on the top surface, the top side beveled edge and the bottom side bevel edge region of the substrate.
REFERENCES:
patent: 5425846 (1995-06-01), Koze et al.
patent: 5723385 (1998-03-01), Shen et al.
patent: 5824457 (1998-10-01), Liu et al.
patent: 5929509 (1999-07-01), Shen et al.
patent: 6153537 (2000-11-01), Bacchetta et al.
patent: 6599839 (2003-07-01), Gabriel et al.
patent: 6660643 (2003-12-01), Kardauskas et al.
Dziobkowski Chester T.
Houghton Thomas F.
Kinser Emily
Restaino Darryl D.
Wang Yun-Yu
Culbert Roberts
International Business Machines - Corporation
Schmeiser Olsen & Watts
Schnurmann Daniel
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