Method for preventing backside defects in dielectric layers...

Details Method for preventing backside defects in dielectric layers... Method for preventing backside defects in dielectric layers...

2011-03-22

2011-03-22

Culbert, Roberts (Department: 1716)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S710000, C438S745000

Reexamination Certificate

active

07910484

ABSTRACT:
A method of forming a TEOS oxide layer over an nitrogen doped silicon carbide or nitrogen doped hydrogenated silicon carbide layer formed on a substrate. The method includes forming the nitrogen doped silicon carbide or nitrogen doped hydrogenated silicon carbide layer on a top surface and a top side beveled edge proximate to the top surface of a substrate; removing or preventing formation of a carbon-rich layer on a bottom side bevel edge region proximate to a bottom surface of the substrate or converting the carbon-rich layer to nitrogen doped silicon carbide or nitrogen doped hydrogenated silicon carbide; and forming the TEOS oxide layer on the top surface, the top side beveled edge and the bottom side bevel edge region of the substrate.

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