Method for preparing SiC crystal and SiC crystal

Details Method for preparing SiC crystal and SiC crystal Method for preparing SiC crystal and SiC crystal

2006-07-25

2006-07-25

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S149000, C117S090000, C117S095000

Reexamination Certificate

active

07081420

ABSTRACT:
A process for closing hollow-core defects, called micropipes, during growth by CVD of a SiC crystal on a SiC single crystal substrate having hollow-core defects, and a crystal obtained according to the process, by contacting the SiC crystal with a source gas adjusted to a C/Si atom ratio range in which the crystal growth rate is determined by the carbon atom supply limitation, then epitaxially growing and laminating a plurality of SiC crystal layers, wherein hollow-core defects in the SiC single crystal substrate dissociate into a plurality of dislocations given by small Burghers vector in order not to propagate to the crystal surface. In addition, the present invention provides a fabrication process of a SiC crystal, wherein a first SiC crystal is made as a buffer layer, and a further SiC crystal is layered thereon using a source gas adjusted to be higher than that of the C/Si ratio when forming the buffer layer, whereby a desired film property is conferred.

REFERENCES:
patent: 6214107 (2001-04-01), Kitabatake
Tsuchida, et al, LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers, Materials Science Forum, 1999, p. 145-148, vols. 338-342, Trans Tech Publications, Switzerland.
Matsumami, SiC Wafer, Sic Semiconductor Device and SIC Wafer Production Method, WO00/68474, 1999, Cover page.
Tsvetkov, et al, SIC Seeded Boule Growth, Materials Science Forum, 1998, p. 3-8, vols. 264-268, Trans Tech Publication, Switzerland.
Okamoto, et al, Method for Manufacturing Single Crystal of Silicone Carbide, EP0967304, 2000, Cover Page.
Thesis of Inventors, Nov. 2002.
Thesis of Inventors, Nov. 15, 2002.
Thesis of Inventors, Mar. 27, 2002.
Thesis of Inventors, Jul. 11, 2002.

Affiliated with

Also associated with

Rating

Method for preparing SiC crystal and SiC crystal does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for preparing SiC crystal and SiC crystal, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for preparing SiC crystal and SiC crystal will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3530991