Method for preparing low dielectric films

Details Method for preparing low dielectric films Method for preparing low dielectric films

2006-08-08

2006-08-08

Chen, Bret (Department: 1762)

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

C427S578000, C427S579000, C438S772000, C438S778000, C438S786000

Reexamination Certificate

active

07087271

ABSTRACT:
A low dielectric constant hydrogenated silicon-oxycarbide (SiCO:H) film is prepared by bringing an organosilicon or organosilicate compound having at least one vinyl or ethynyl group, or a mixture of a saturated organosilicon or organosilicate compound and an unsaturated hydrocarbon into contact with a substrate in the presence of an O2-containing gas plasma.

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