Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into...
Reexamination Certificate
2004-08-17
2009-02-24
Lee, Hsien-ming (Department: 2823)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
C438S513000, C438S514000, C438S515000
Reexamination Certificate
active
07494905
ABSTRACT:
The present invention provides, for use in a semiconductor manufacturing process, a method (100) of preparing an ion-implantation source material. The method includes providing (110) a deliquescent ion implantation source material and mixing (110) the deliquescent ion implantation source material with an organic liquid to form a paste.
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Brady III Wade James
Lee Hsien-ming
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Tung Yingsheng
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