Method for preparing a source material including forming a...

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into...

Reexamination Certificate

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C438S513000, C438S514000, C438S515000

Reexamination Certificate

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07494905

ABSTRACT:
The present invention provides, for use in a semiconductor manufacturing process, a method (100) of preparing an ion-implantation source material. The method includes providing (110) a deliquescent ion implantation source material and mixing (110) the deliquescent ion implantation source material with an organic liquid to form a paste.

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patent: 10199823 (1998-07-01), None

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