Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Having heterojunction
Reexamination Certificate
2008-07-08
2008-07-08
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Having heterojunction
C257SE29033
Reexamination Certificate
active
07396731
ABSTRACT:
The present invention refers to a method for preparing a non-self-aligned heterojunction bipolar transistor comprising: preparing a patterned emitter metal on an emitter epi layer of a HBT epi structure on a substrate; preparing an emitter epitaxy below the emitter metal; applying a resist layer on the top surface covering the emitter metal and emitter epitaxy, and the base layer; applying lithography leaving the emitter epitaxy and the emitter metal covered by the resist vertically with a width pDand leaving a pattern according to the mask in the resist; depositing base metal on the entire surface; and removing the remaining resist and the base metal covering the resist defining a base metal, the base metal being spaced from the emitter epitaxy and the emitter metal by a distance xDfrom 0.05 μm to 0.7 μm. The present invention refers to a non-self-aligned heterojunction bipolar transistor as prepared by this method.
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HRL Laboratories LLC
Ladas & Parry
Le Thao P.
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