Method for preparing a fluoro-containing polyimide film

Details Method for preparing a fluoro-containing polyimide film Method for preparing a fluoro-containing polyimide film

1995-06-13

1997-12-30

Pianalto, Bernard

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

4272481, 427296, 427316, 427525, 427536, H05H 120

Patent

active

057027730

ABSTRACT:
A method for blending fluorine into a polyimide free of fluorine comprises the steps of generating fluorine radicals in a fluorine based gas, removal of any charge particles from the gas to leave the fluorine radicals in the gas, and exposing a polyimide free of fluorine to an irradiation of the fluorine radicals so that the irradiated fluorine radicals penetrate into an inside of the polyimide without showing any reaction to the removed charge particles on a surface of the polyimide.

REFERENCES:
S-Y. Wu, "Dielectric and Chemical Modifications in Polyimide Films Etched in O.sub.2 /CF.sub.4 Plasmas", J. Vac. Sci. Technol., Jul./Aug. 1993, vol. 11, No. 4, pp. 1337-1345.
E. Onyiriuka, "Effects of O.sub.2, Air, and CF.sub.4 Plasmas on Poly(etherketone) Surfaces", J. Vac. Sci. Technol., Nov./Dec. 1993, vol. 11, No. 6, pp. 2941-2944.
"Fluoro-Containing Polyimide Blends: Prediction and Experiments", Journal fo Polymer Science: Part A: Polymer Chemistry, 1991, vol. 29, pp. 1207-1212. (no month avail.).
Y. Misawa et al., "A New Multilevel Interconnection System for Submicrometer VLSI's Using Multilayered Dielectrics of Plasma Silicon Oxide and Low-Thermal-Expansion Polyimide", IEEE Transactions on Electron Devices, Mar. 1987, vol. ED-34, No. 3, pp. 621-627.

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