Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-03-06
2009-02-10
Doan, Theresa T (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S152000, C438S239000, C257S347000
Reexamination Certificate
active
07488630
ABSTRACT:
A method which is intended to facilitate and/or simplify the process of fabricating interlayer vias by selective modification of the FEOL film stack on a transfer wafer is provided. Specifically, the present invention provides a method in which two dimensional devices are prepared for subsequent integration in a third dimension at the transition between normal FEOL processes by using an existing interlayer contact mask to define regions in which layers of undesirable dielectrics and metal are selectively removed and refilled with a middle-of-the-line (MOL) compatible dielectric film. As presented, the inventive method is compatible with standard FEOL/MOL integration schemes, and it guarantees a homogeneous dielectric film stack specifically in areas where interlayer contacts are to be formed, thus allowing the option of a straightforward integration path, if desired.
REFERENCES:
patent: 6355501 (2002-03-01), Fung et al.
patent: 6500724 (2002-12-01), Zurcher et al.
patent: 6645796 (2003-11-01), Christensen et al.
patent: WO-2006/077441 (2006-07-01), None
Fleischmann, R.M. et al. (2004). “Considerations With the Use of Biological Therapy in the Treatment of Rheumatoid Arthritis,”Expert. Opin. Drug Safety3(5):391-403.
International Search Report for PCT Application No. PCT/US2006/013921 filed Apr. 11, 2006, mailed Jan. 2, 2007, seven pages.
Lane, N. et al. (Sep. 2005). “RN624 (Anti-NGF) Improves Pain and Function in Subjects with Moderate Knee Osteoarthritis: A Phase I Study,”Arthritis&Rheumatism52(9-Suppl. S):S461, Abstract No. 1205.
Orbach, H. et al. (Dec. 2005). “Intravenous Immunoglobulin: Adverse Effects and Safe Aministration,”Clinical Rev. Allergy Immunol. 29(3):173-184, (Abstract Only,) one page.
Seaver, S.S. (Aug. 1994). “Monoclonal Antibodies in Industry: More Difficult Than Originally Thought,”Genetic Engineering14(14):10, 21.
Shelton, D.L. et al. (Jul. 2005). “Nerve Growth Factor Mediates Hyperalgesia and Cachexia in Auto-Immune Arthritis,”Pain116(1-2):8-16.
Stedman, T.L. (2000). “Definition of Osteoarthritis”In Illustrated Stedman's Medical Dictionary, Lippincott Williams & Wilkins: Baltimore, MD, 27th Edition, p. 1282.
Suntharalingam, G. et al. (Sep. 7, 2006). “Cytokine Storm in a Phase 1 Trial of the Anti-CD28 Monoclonal Antibody TGN1412,”New England Journal of Medicine355(10):1018-1029.
Vastag, B. (Jun. 2006). “Monoclonals Expand into Neural Disorders,”Nature Biotechnology24(6):595-596.
Frank David J.
La Tulipe, Jr. Douglas C.
Shi Leathen
Steen Steven E.
Topol Anna W.
Doan Theresa T
International Business Machines - Corporation
Scully , Scott, Murphy & Presser, P.C.
Tuchman, Esq. Ido
LandOfFree
Method for preparing 2-dimensional semiconductor devices for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for preparing 2-dimensional semiconductor devices for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for preparing 2-dimensional semiconductor devices for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4110670