Method for preparation of silicon nitride gallium diffusion barr

Details Method for preparation of silicon nitride gallium diffusion barr Method for preparation of silicon nitride gallium diffusion barr

1993-11-16

1995-11-21

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

385129, 385130, 385131, 385132, 385 14, H01L 2102, H01L 2120

Patent

active

054686890

ABSTRACT:
A technique is described for the preparation of a thin film of a silicon nitride diffusion barrier to gallium on a silicon integrated circuit chip. The technique involves reacting nitrogen and silane in a ratio of 53:1 to 300:1 in a plasma enhanced chemical vapor deposition apparatus. The described technique is of interest for use in the monolithic integration of interconnected GaAs/AlGaAs double heterostructures, modulators and silicon MOSFET structures.

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