Method for predicting inductance and self-resonant frequency...

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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C336S232000, C257S531000

Reexamination Certificate

active

07451415

ABSTRACT:
In this invention, a closed-form integral model for on-chip suspended rectangular spiral inductor is presented. The model of this invention bases on the Kramers-Kronig relations, field theory, and solid state physics to characterize a spiral inductor which RFIC designers could easily have the optimal design utilizing this analytical method. Meanwhile, this model can provide satisfactory prediction to the inductance and self-resonant frequency of the spiral inductor without complicated geometry analysis. Furthermore, unlike conventional formulations only based on circuit parameters, this model could safely predict the inductance and the self-resonant frequency when altering the material (excluding ferromagnetic materials) of a spiral inductor.

REFERENCES:
patent: 6311145 (2001-10-01), Hershenson et al.
patent: 6588002 (2003-07-01), Lampaert et al.
patent: 6665849 (2003-12-01), Meuris et al.
C. C. Chen et al. A Closed-Form Integral Model of Spiral Inductor Using the Kramers-Kronig Relations, IEEE Microwave and Wireless Components Letters, vol. 15, No. 11 (Nov. 2005), pp. 778-780.
Greenhouse, IEEE Transaction on Parts, Hybrids, and Packaging, Jun. 1974, pp. 101-109, vol. PHP-10, No. 2.
Mohan et al., IEEE Journal of Solid-State Circuits, Oct. 1999, pp. 1419-1424, vol. 34.
Asgaran, The 14th International Conference on Microelectronics, Dec. 2002, pp. 247-250.
Jenei et al. IEEE Journal of Solid-State Circuits, Jan. 2002, pp. 77-80, vol. 37, No. 1.
Ansoft HFSS, 9.0 Version, Ansoft, http://www.ansoft.com/products/hf.

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