Static information storage and retrieval – Read/write circuit – Parallel read/write
Reexamination Certificate
2005-12-29
2008-11-04
Luu, Pho M. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Parallel read/write
C365S203000, C365S222000
Reexamination Certificate
active
07447094
ABSTRACT:
Power-saving techniques are employed in sensing a group of non-volatile memory cells in parallel. One technique is that the coupling of the memory cells to their bit lines is delayed during a precharge operation in order to reduce the cells'currents working against the precharge. Another technique is that a power-consuming precharge period is minimized by preemptively starting the sensing in a multi-pass sensing operation. High current cells not detected as a result of the premature sensing will still be able to be detected in a subsequent pass.
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Li Yan
Tsao Shou-Chang
Davis , Wright, Tremaine, LLP
Luu Pho M.
Sandisk Corporation
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