Method for post lithographic critical dimension shrinking...

Details Method for post lithographic critical dimension shrinking... Method for post lithographic critical dimension shrinking...

2005-01-12

2009-02-24

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21649

Reexamination Certificate

active

07494919

ABSTRACT:
A method for reducing the size of a patterned semiconductor feature includes forming a first layer over a substrate to be patterned, and forming a photoresist layer over the first layer. The photoresist layer is patterned so as to expose portions of the first layer, and the exposed portions of the first layer are removed in a manner so as to create an undercut region beneath the patterned photoresist layer. The patterned photoresist layer is reflowed so as to cause reflowed portions of the patterned photoresist layer to occupy at least a portion of the undercut region.

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Cox et al.; “Developer Soluble Organic BARCs for KrF Lithography;” 2003 Society of Photo-Optical Instrumentation Engineers.
WIDE—Wet Developable-iLine Anti-Reflective Coating—Brochure from Brewer Science Inc.

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