Method for post-etching of metal patterns

Details Method for post-etching of metal patterns Method for post-etching of metal patterns

1997-01-24

1998-05-26

Kunemund, Robert

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

438723, 438734, 438743, B08B 600, H01L 21302

Patent

active

057558914

ABSTRACT:
An improved process is described for the post-etching treatment after subtractive etching of aluminum and aluminum-alloy layers in the fabrication of semiconductor integrated circuit devices. The improvement consists of in situ exposure immediately after subtractive etching of the metal pattern to a reactive plasma sustained in a mixture of oxygen and carbon tetrafluoride gases by continuous radiofrequency power input for a controlled period of time.

REFERENCES:
patent: 4617193 (1986-10-01), Wu
patent: 4833096 (1989-05-01), Huang et al.
patent: 5348619 (1994-09-01), Bohannon et al.
S. Wolf et al. "Silicon Processing For the VLSI Era, vol. 1" Lattice Press, Sunset Beach, CA, pp. 563-564.

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