Method for post chemical-mechanical planarization cleaning of se

Details Method for post chemical-mechanical planarization cleaning of se Method for post chemical-mechanical planarization cleaning of se

1997-08-21

1999-04-20

Warden, Jill

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

134 26, 134 28, B08B 312, B08B 300

Patent

active

058948520

ABSTRACT:
The inventive method cleans residual titanium accumulations and other undesirable materials from a planarized surface of a wafer to produce a planarized surface with less than about fifty defects per wafer. After a metallic layer of material has been planarized using a CMP process, loose residual particles of undesirable material are removed from the planarized surface. The residual titanium accumulations remaining on the planarized surface are then detached from the planarized surface, which produces additional, new particles on the surface of the wafer. The additional particles produced by the detaching step are then scrubbed from the planarized surface until the planarized surface has less than approximately 50 defects per wafer.

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