Method for post chemical-mechanical planarization cleaning...

Details Method for post chemical-mechanical planarization cleaning... Method for post chemical-mechanical planarization cleaning...

2006-05-16

2006-05-16

Markoff, Alexander (Department: 1746)

Cleaning and liquid contact with solids

Processes

Using solid work treating agents

C134S026000, C134S028000

Reexamination Certificate

active

07045017

ABSTRACT:
The inventive method cleans residual titanium accumulations and other undesirable materials from a planarized surface of a wafer to produce a planarized surface with less than about fifty defects per wafer. After a metallic layer of material has been planarized using a CMP process, loose residual particles of undesirable material are removed from the planarized surface. The residual titanium accumulations remaining on the planarized surface are then detached from the planarized surface, which produces additional, new particles on the surface of the wafer. The additional particles produced by the detaching step are then scrubbed from the planarized surface until the planarized surface has less than approximately 50 defects per wafer.

REFERENCES:
patent: 4638553 (1987-01-01), Nilarp
patent: 4962776 (1990-10-01), Liu et al.
patent: 4973563 (1990-11-01), Prigge et al.
patent: 5174816 (1992-12-01), Aoyama et al.
patent: 5290361 (1994-03-01), Hayashida et al.
patent: 5389194 (1995-02-01), Rostoker et al.
patent: 5397397 (1995-03-01), Awad
patent: 5492858 (1996-02-01), Bose et al.
patent: 5498293 (1996-03-01), Ilardi et al.
patent: 5551986 (1996-09-01), Jain
patent: 5679169 (1997-10-01), Gonzales et al.
patent: 5894852 (1999-04-01), Gonzales et al.
patent: 6273101 (2001-08-01), Gonzales et al.
patent: 6640816 (2003-11-01), Gonzales et al.

Affiliated with

Also associated with

Rating

Method for post chemical-mechanical planarization cleaning... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for post chemical-mechanical planarization cleaning..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for post chemical-mechanical planarization cleaning... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3575255