Method for polishing cadmium sulfide semiconductors

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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134 34, 156903, 252 791, H01L 21306

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active

041849086

ABSTRACT:
A method for polishing semiconductors, particularly surfaces of CdS. The method is comprised of polishing a substrate with a pad charged with Transene and Cab-O-Sil while an iodine solution is added in small quantities. The last period of polishing is done while flushing the polishing pad with Transene. Upon completion of polishing, the substrate is given an immediate wash with Transene, followed by ultrasonic cleaning in Transene. After the ultrasonic cleaning, the substrate is again rinsed in Transene and then spun dried. The cleaning process is continuous and the cleaning solutions are kept in active contact with the substrate in order to provide a haze-free product.

REFERENCES:
patent: 3156596 (1964-11-01), Sullivan
patent: 3262825 (1966-07-01), Fuller
patent: 3595718 (1971-07-01), Fishman et al.
patent: 3629023 (1971-12-01), Strehlow
patent: 4064660 (1977-12-01), Lampert
patent: 4070797 (1978-01-01), Griesshammer et al.
patent: 4108716 (1978-08-01), Pritchard et al.
GEOS Technical Report 103, entitled, "Polishing Procedures for Compound Sconductors and Intermetallic Compounds".
J. Electrochem Society (1962), vol. 109, p. 880 by Fuller et al., entitled, "A Polishing Etchant for III-V Semiconductors".
J. Electrochem Society (1963), vol. 110, entitled, "The Chemical Polishing of Gallium Arsenide in Bromine--Methanol", by Sullivan et al. pp. 585-587.
J. Electrochem Society (1971), vol. 118, entitled, "Evaluation of a New Polish for Gallium Arsenide Using a Peroxide--Alkaline Solution" by Dyment et al., pp. 1346-1350.

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