Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2006-05-02
2006-05-02
Deo, Duy-Vu N. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S691000, C438S693000
Reexamination Certificate
active
07037838
ABSTRACT:
According to one aspect of the invention, an improved process for preparing a surface of substrate is provided wherein the surface of the substrate is prepared for a chemical mechanical polishing (CMP) process, the CMP process is performed on the surface of the substrate, and the surface of the substrate is finished to clear the substrate surface of any active ingredients from the CMP process. Also, an improved substrate produced by the method is provided. According to one aspect of the invention, particular polishing materials and procedures may be used that allow for increased quality of AlN substrate surfaces.
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Lopez Javier Martinez
Morgan Kenneth
Rojo Juan Carlos
Schowalter Leo J.
Crystal IS Inc.
Deo Duy-Vu N.
Rensselaer Polytechnic Institute
Wolf Greenfield & Sacks P.C.
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