Etching a substrate: processes – Nongaseous phase etching of substrate – Using film of etchant between a stationary surface and a...
Patent
1997-02-27
1998-09-29
Nguyen, Nam
Etching a substrate: processes
Nongaseous phase etching of substrate
Using film of etchant between a stationary surface and a...
156345, 438692, B44C 122
Patent
active
058142401
ABSTRACT:
A method for polishing a semiconductor wafer, which can prevent from occurring a sloped edge at a peripheral portion of the semiconductor wafer and produce a semiconductor wafer of high-flatness, is provided.
The polishing method utilizes a polishing block consisting of a ceramic plate 11, a backing pad 12 and a template 13. The backing pad 12 has a larger compression rate than that of the polishing cloth 2. The polishing block 1 is mounted on a semiconductor wafer 3. The semiconductor wafer 3 is pressed against the polishing cloth 2 to perform the polishing.
REFERENCES:
patent: 5409770 (1995-04-01), Netsu et al.
patent: 5573448 (1996-11-01), Nakazima et al.
patent: 5635083 (1997-06-01), Breivogel et al.
Goudreau George
Komatsu Electronic Metals Co. Ltd.
Nguyen Nam
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