Semiconductor device manufacturing: process – Including control responsive to sensed condition – Optical characteristic sensed
Patent
1998-03-27
2000-05-09
Powell, William
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Optical characteristic sensed
438 14, 438712, 438726, 156345, H01L 2100
Patent
active
060603291
ABSTRACT:
A method for plasma treatment is disclosed which effects detection of the amount of particles in an plasma generation area measuring the electron density in the particles based on the numerical value of the electric density in the plasma generation area.
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In situ polarization-sensitive laser-light-scattering method for simultaneous measurements of two-dimensional spatial size and density distributions of particles in plasmas, J. Vac. Sci. Technol.A 14(2), p. 603-605.
On the Effect of Sheath Capacitance in the Measurements by Insulated Pulse Probe Method, Proceeding of the 3rd International Conference on Reacitve Plasmas and 14th Symposium on Plasma Processing.
A New Technology using TiN-CVD Electrode and Non Etch Back SOG Interlayer for CROWN Shaped Ta.sub.2 O.sub.5 Capacitor, VMIC Conference 197 ISMIC, p. 571-593.
Arimoto Hiroshi
Kamata Takeshi
Fujitsu Limited
Powell William
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