Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-11-13
2007-11-13
Ahmed, Shamim (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S696000, C438S706000, C438S712000, C438S714000, C438S720000, C216S067000
Reexamination Certificate
active
10860833
ABSTRACT:
A method for etching a feature in a low-k dielectric layer through a photoresist etch mask over a substrate. A gas-modulated cyclic stripping process is performed for more than three cycles for stripping a single photoresist mask. Each cycle of the gas-modulated cyclic stripping process comprises performing a protective layer formation phase and a stripping phase. The protective layer forming phase using first gas chemistry with a deposition gas chemistry, wherein the protective layer forming phase is performed in about 0.005 to 10 seconds for each cycle. The performing the stripping phase for stripping the photoresist mask using a second gas chemistry using a stripping gas chemistry, where the first gas chemistry is different than the second gas chemistry, wherein the etching phase is performed in about 0.005 to 10 seconds for each cycle.
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Choi Thomas S.
Cirigliano Peter
Hudson Eric A.
Lee Sang-heon
Loewenhardt Peter
Ahmed Shamim
Lam Research Corporation
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