Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-07-12
2005-07-12
Vinh, Lan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S710000, C438S712000, C438S714000, C216S058000, C216S067000
Reexamination Certificate
active
06916746
ABSTRACT:
A method for etching a layer over a substrate is provided. A gas-modulated cyclic process is performed for more than three cycles. Each cycle comprises performing a protective layer forming phase using first gas chemistry with a deposition gas chemistry, which is performed in about 0.0055 to 7 seconds for each cycle and performing an etching phase for the feature through the etch mask using a second gas chemistry using a reactive etching gas chemistry, which is performed in about 0.005 to 14 seconds for each cycle. The protective layer forming phase comprises providing the deposition gas and forming a plasma from the deposition gas. Each etching phase comprises providing a reactive etching gas and forming a plasma from the reactive etching gas.
REFERENCES:
patent: 4414059 (1983-11-01), Blum et al.
patent: 5498312 (1996-03-01), Laermer et al.
patent: 5501893 (1996-03-01), Laermer et al.
patent: 6051503 (2000-04-01), Bhardwaj et al.
patent: 6071822 (2000-06-01), Donohue et al.
patent: 6100200 (2000-08-01), Van Buskirk et al.
patent: 6127273 (2000-10-01), Laermer et al.
patent: 6187685 (2001-02-01), Hopkins et al.
patent: 6200822 (2001-03-01), Becker et al.
patent: 6211092 (2001-04-01), Tang et al.
patent: 6214161 (2001-04-01), Becker et al.
patent: 6261962 (2001-07-01), Bhardwaj et al.
patent: 6284148 (2001-09-01), Laermer et al.
patent: 6303512 (2001-10-01), Laermer et al.
patent: 6316169 (2001-11-01), Vahedi et al.
patent: 6387287 (2002-05-01), Hung et al.
patent: 6489632 (2002-12-01), Yamazaki et al.
patent: 6617253 (2003-09-01), Chu et al.
patent: 6632903 (2003-10-01), Jung et al.
patent: S63-13334 (1988-01-01), None
Hudson Eric A.
Tietz James V.
Beyer Weaver & Thomas LLP
Lam Research Corporation
Vinh Lan
LandOfFree
Method for plasma etching using periodic modulation of gas... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for plasma etching using periodic modulation of gas..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for plasma etching using periodic modulation of gas... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3433323