Method for plasma etching performance enhancement

Colloid systems and wetting agents; subcombinations thereof; pro – Continuous liquid or supercritical phase: colloid systems;... – Aqueous continuous liquid phase and discontinuous phase...

Reexamination Certificate

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C216S037000, C216S041000, C438S694000, C438S706000, C438S710000, C438S723000, C438S725000

Reexamination Certificate

active

07977390

ABSTRACT:
A method for etching features in a dielectric layer is provided. A mask is formed over the dielectric layer. A protective silicon-containing coating is formed on exposed surfaces of the mask. The features are etched through the mask and protective silicon-containing coating. The features may be partially etched before the protective silicon-containing coating is formed.

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