Method for plasma etching or cleaning with diluted NF.sub.3

Details Method for plasma etching or cleaning with diluted NF.sub.3 Method for plasma etching or cleaning with diluted NF.sub.3

1993-07-08

1995-05-09

Breneman, R. Bruce

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

134902, 1566431, B44C 122

Patent

active

054136709

ABSTRACT:
A method has been developed for the removal of silicon nitride and silicon dioxide, or other semiconductor materials from a surface of a wafer or CVD reactor. The method uses NF.sub.3, mixed with an electropositive diluent, preferably argon, at a given range of concentration, pressure, flowrate, and power to obtain the fastest possible etch rates. The etch rates of the film being processed can be caused to increase even as the concentration of NF.sub.3 in the diluent is decreased by choosing the proper diluent and operating conditions. Not only does this method increase the etch rate, thereby increasing the throughput of the reactor using this process, it also accomplishes this task at low concentrations of NF3 resulting in a lower cost.

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Barkanic, Hoff, Stach, Golja, "Dry Etching Using NF.sub.3 /Ar and NF.sub.3 /He Plasma" Special Technical Testing Publication 850, 1984, pp. 110-123.
Tan, Goh, Naseem & Brown, "Plasma Etching of Silicon Using NF Diluted w/ Ar, Ni, and H.sub.2 " Proc. 2nd Int'l. Conf. on Elec. Mats, 1990 pp. 439-444.
Ianno, Greenberg and Verdeyen "Comparison of the Etching & Plasma Characteristics of Discharges in CF.sub.4 and NF.sub.3 " J. Electrochem. Soc. vol. 128, No. 10, pp. 2174-2179.
Chow, Steckl "Plasma Etching of Sputtered Mo & MoSi.sub.2 Thin Films in NF.sub.3 Gas Mixtures" J. Appl. Phys. vol. 53, No. 8 Aug. 1982 pp. 5531-5540.
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