Method for plasma etching of positively sloped structures

Details Method for plasma etching of positively sloped structures Method for plasma etching of positively sloped structures

2007-08-06

2010-11-09

Deo, Duy-Vu N (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S696000, C438S700000, C438S701000, C438S702000, C438S703000, C438S706000, C438S714000

Reexamination Certificate

active

07829465

ABSTRACT:
The present invention provides a method of etching features in a substrate. The method comprising the steps of placing the substrate on a substrate support in a vacuum chamber. An alternatingly and repeating process is performed on the substrate until a predetermined trench depth and a predetermined sidewall angle are achieved. One part of the process is a deposition step which is carried out by introducing at least one polymer containing gas into the vacuum chamber. A plasma is ignited from the polymer containing gas which is then used to deposit a polymer on the substrate. The other part of the alternatingly and repeating process is an etching step which is carried out by introducing an etchant containing gas, a polymer containing gas and a scavenger containing gas into the vacuum chamber. A plasma is ignited from the etchant containing gas, the polymer containing gas and the scavenger containing gas which is then used to etch the substrate.

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