Method for plasma etching III-V semiconductors with a BCl.sub.3

Details Method for plasma etching III-V semiconductors with a BCl.sub.3 Method for plasma etching III-V semiconductors with a BCl.sub.3

1984-09-14

1986-02-11

Massie, Jerome

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156654, 156662, 204192E, 252 791, H01L 21308

Patent

active

045697183

ABSTRACT:
The use of an anisotropic etchant containing BCl.sub.3 and a source of atomic chlorine for III-V semiconductor materials has yielded improved results for semiconductor devices. For example, via gallium arsenide field effect transistors produced using this anisotropic etchant to fabricate via holes exhibit excellent electrical characteristics.

REFERENCES:
patent: 3795557 (1974-03-01), Jacob
patent: 4157556 (1979-06-01), Decker
patent: 4194935 (1980-03-01), Dingle et al.
patent: 4256534 (1981-03-01), Levinstein et al.
patent: 4285763 (1981-08-01), Coldren
patent: 4326911 (1982-04-01), Howard
D'Asaro et al., "Plasma . . . FET's " Institute Physics Conf., Ser. No. 56, Chap. 5.
Smolinsky et al., "Plasma . . . Oxides" Presentation by R. Chang. American Vacuum Soc. Meeting, N.Y., N.Y. (10/5/79).

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