Method for plasma etching a chromium layer through a carbon...

Details Method for plasma etching a chromium layer through a carbon... Method for plasma etching a chromium layer through a carbon...

2005-09-28

2008-05-20

Vinh, Lan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S710000, C438S712000

Reexamination Certificate

active

07375038

ABSTRACT:
Methods for etching chromium and forming a photomask using a carbon hard mask are provided. In one embodiment, a method of a chromium layer includes providing a substrate in a processing chamber, the substrate having a chromium layer partially exposed through a patterned carbon hard mask layer, providing a process gas containing chlorine and carbon monoxide into the etching chamber, and maintaining a plasma of the process gas and etching the chromium layer through the carbon hard mask layer. The method of etching a chromium layer through a patterned carbon hard mask layer is useful for fabricating photomasks.

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