Method for plasma etch of ruthenium

Details Method for plasma etch of ruthenium Method for plasma etch of ruthenium

1992-04-24

1993-08-17

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156656, 1566591, 156664, 437245, B44C 122, C23F 100

Patent

active

052365506

ABSTRACT:
The present invention provides a process for patterning ruthenium. A layer of ruthenium is formed on a substrate. The ruthenium is masked. The ruthenium is exposed to an oxygen plasma.

Affiliated with

Also associated with

Rating

Method for plasma etch of ruthenium does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for plasma etch of ruthenium, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for plasma etch of ruthenium will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2241328