Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Reexamination Certificate
2003-10-29
2010-11-16
Meeks, Timothy (Department: 1715)
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
C427S248100, C427S457000
Reexamination Certificate
active
07833587
ABSTRACT:
A method for making the characteristics of the distribution of film thickness uniform is provided, avoiding generation of phase differences among streams of high-frequency electric power by manipulating the electrical characteristics of cables through which the high-frequency electric power is transmitted. Coaxial cables (19ato19hand24ato24h) having a standard length and vacuum cables (20ato20hand25ato25h) are installed, then a film is formed on a substrate by actually supplying high-frequency electric power, and thereafter the condition of vapor deposition such as the thickness of the film is observed. Based on the observations, the full lengths of the coaxial cables which communicate with the feeding points and the electrodes which correspond with positions over the substrate which need to be adjusted are changed. The coaxial cables are installed again, and high-frequency electric power equivalent to that used in the previous operation is supplied to form a film. The distribution of the film formed on the substrate is made uniform by repeating the above operations.
REFERENCES:
patent: 5239134 (1993-08-01), Pote et al.
patent: 5474727 (1995-12-01), Perez
patent: 5733511 (1998-03-01), De Francesco
patent: 6359250 (2002-03-01), Blonigan et al.
patent: 2001/0031542 (2001-10-01), Ito et al.
patent: 42 42 894 (1994-06-01), None
patent: 1 146 569 (2001-10-01), None
patent: 1146569 (2001-10-01), None
patent: 2001-257098 (2001-09-01), None
patent: 2001-274099 (2001-10-01), None
patent: 2002-69653 (2002-03-01), None
Kawamura Keisuke
Mashima Hiroshi
Tagashira Kenji
Takeuchi Yoshiaki
Yamada Akira
Gambetta Kelly M
Meeks Timothy
Mitsubishi Heavy Industries Ltd.
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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