Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2005-08-30
2005-08-30
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S692000, C438S693000, C438S694000, C438S697000, C438S700000
Reexamination Certificate
active
06936541
ABSTRACT:
A method for planarizing metal interconnects of a semiconductor wafer includes the steps of polishing the semiconductor wafer with a polishing solution and a polishing pad to planarize the metal interconnects. The polishing solution has by weight percent, 0.15 to 5 benzotriazole, 0 to 1 abrasive, 0 to 10 polymeric particles, 0 to 5 polymer-coated particles and balance water at a pH of less than 5 and a removal rate-pressure sensitivity (dr/dp) of at least 750 (Å/min/psi). The polishing simultaneously accelerates removal of projecting metal from the metal interconnects with the polishing pad providing a first pressure that increases removal rate of the projecting metal; and it inhibits removal of recessed metal from the metal interconnects with the polishing pad providing a second pressure that decreases removal of the recessed metal.
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Bian Jinru
Ghosh Tirthankar
Thomas Terence M.
Biederman Blake
Norton Nadine G.
Rohn and Haas Electronic Materials CMP Holdings, Inc.
Tran Binh X.
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