Method for physical parameter extraction for transistor model

Details Method for physical parameter extraction for transistor model Method for physical parameter extraction for transistor model

2006-10-03

2006-10-03

Kik, Phallaka (Department: 2825)

Computer-aided design and analysis of circuits and semiconductor

Nanotechnology related integrated circuit design

C716S030000, C716S030000, C700S097000, C700S110000

Reexamination Certificate

active

07117460

ABSTRACT:
A method is disclosed for modifying a device dimension extraction model. After collecting in-line data with regard to at least one feature of a device for one or more layouts, a proximity and linearity effect with regard to the feature based on the collected data is determined. Further, the device's electrically active region (OD) drawn size effect with regard to the feature is also determined based on the collected data. The dimension extraction model is modified based on at least two of the above three characterized effects.

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