Method for performing on-wafer tuning of thin film bulk acoustic

Details Method for performing on-wafer tuning of thin film bulk acoustic Method for performing on-wafer tuning of thin film bulk acoustic

1996-10-10

2000-04-18

Budd, Mark O.

Electrical generator or motor structure

Non-dynamoelectric

Piezoelectric elements and devices

310324, 310366, H01L 4108

Patent

active

06051907&

ABSTRACT:
A method for tuning a Thin Film Bulk Acoustic Wave Resonator (FBAR) located on a wafer. The FBAR comprises a plurality of layers having respective thicknesses. The FBAR exhibits at least one of a series resonance and a parallel resonance at respective frequencies that are a function of the thickness of at least one of the layers. A first step of the method includes measuring a frequency at which the FBAR exhibits one of a series resonance and a parallel resonance. A next step includes calculating an amount (A) by which the thickness of the at least one layer needs to be altered in order to minimize a difference between the measured frequency and a reference frequency. A further step includes altering the thickness of the at least one layer by the amount (A).

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