Method for performing chemical shrink process over BARC...

Details Method for performing chemical shrink process over BARC... Method for performing chemical shrink process over BARC...

2007-10-30

2007-10-30

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S733000, C438S706000

Reexamination Certificate

active

11160670

ABSTRACT:
A structure and a method for forming the same. The method comprises providing a structure including (a) a hole layer, (b) a BARC (bottom antireflective coating) layer on the top of the hole layer, and (c) a patterned photoresist layer on top of the BARC layer and having a photoresist hole; etching the BARC layer through the photoresist hole to extend the photoresist hole to the hole layer; performing the chemical shrinking process to shrink the extended photoresist hole; and etching the hole layer through the shrunk, extended photoresist hole so as to form a hole in the hole layer.

REFERENCES:
patent: 7083898 (2006-08-01), Bailey et al.
patent: 2003/0219988 (2003-11-01), Shan et al.
patent: 2004/0041272 (2004-03-01), Signorini
patent: 2005/0084661 (2005-04-01), Hosoi et al.
patent: 2006/0154412 (2006-07-01), Brodsky et al.

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