Method for performing chemical mechanical polish (CMP) of a wafe

Details Method for performing chemical mechanical polish (CMP) of a wafe Method for performing chemical mechanical polish (CMP) of a wafe

1994-11-03

1997-03-11

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

B24B 100

Patent

active

056097190

ABSTRACT:
A CMP pad (58) for polishing a semiconductor wafer includes flat polymer sheet (85) for adhering to platen (26). Flat polymer sheet (85) receives slurry (66) that lubricates pad (58) and semiconductor wafer (54) as they contact one another. Pad (58) includes slurry recesses (82) that hold slurry (66) and a plurality of slurry channel paths (66) that form flow connections between predetermined ones of slurry recesses (82). Pad (58) maintains a desired level of slurry (66) between semiconductor wafer (54) and pad (58) to increase the oxide layer removal rate from semiconductor wafer (54), make the semiconductor wafer (54) surface more uniform, and minimize edge exclusion (92) in the CMP of semiconductor wafers (54).

REFERENCES:
patent: 5020283 (1991-06-01), Tuttle
patent: 5078801 (1992-01-01), Malik
patent: 5216843 (1993-06-01), Breivogel et al.
patent: 5297364 (1994-03-01), Tuttle
patent: 5329734 (1994-07-01), Yu
patent: 5394655 (1995-03-01), Allen et al.
patent: 5441598 (1995-08-01), Yu et al.

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