Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2006-09-12
2006-09-12
Goudreau, George A. (Department: 1763)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S039000, C438S042000, C438S421000, C438S694000, C438S697000, C438S455000, C438S458000
Reexamination Certificate
active
07105448
ABSTRACT:
A method for peeling off a thin film semiconductor element over an insulating surface by using a void, and a method for manufacturing a semiconductor device by transferring the peeled semiconductor element. According to the peeling method of the invention, a first base layer having a plurality of recessed portions is formed over a substrate, and a second base layer having a plurality of voids is formed on the recessed portions of the first base layer. On the second base layer, a third base layer is formed and a semiconductor element is formed thereon. Then, by separating the second base layer at an intersecting surface with the voids, the semiconductor element is peeled off from the substrate.
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Arai Yasuyuki
Takayama Toru
Goudreau George A.
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
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