Method for PBLOCOS isolation between semiconductor devices

Details Method for PBLOCOS isolation between semiconductor devices Method for PBLOCOS isolation between semiconductor devices

1996-12-26

1998-06-09

Fourson, George R.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

H01L 2176

Patent

active

057633177

ABSTRACT:
Disclosed is a method for the isolation between active regions of a semiconductor device. The method provides an poly buffered local oxidation of silicon(PBLOCOS) technology. In this method, a non-doped polysilicon layer and the overlying amorphous silicon layer are used as a buffer layer. To form a field oxide region for isolation between semiconductor devices, first a pad oxide film, the buffer layer, silicon nitride layer are formed on a semiconductor substrate. Thereafter, patterning is performed to expose the pad oxide film at a selected region. Lastly, thermal oxidation is performed, thereby the exposed pad oxide is grown to form the field oxide.

REFERENCES:
patent: 5093277 (1992-03-01), Arima et al.
patent: 5192707 (1993-03-01), Hodges et al.
patent: 5318922 (1994-06-01), Lim et al.
patent: 5358893 (1994-10-01), Yang et al.
Sung, J.M. "The Impact of Poly-Removal Techniques on Thin Thermal Oxide Property in Poly-Buffer LOCOS Technology", IEEE Transactions on Electron Devices, vol.38, No.8, pp. 1970-1973, Aug. 1991.

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