Method for patterning layer having high reflectance using photos

Details Method for patterning layer having high reflectance using photos Method for patterning layer having high reflectance using photos

1986-06-24

1987-12-22

Schilling, Richard L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430272, 430275, 430276, 430278, 430317, 430318, 430323, 156652, 156653, 1566591, G00F 726, G03C 184

Patent

active

047146680

ABSTRACT:
A method for patterning a layer having a high reflectance includes directly forming on a layer having a high reflectance a light-absorbing film having a ratio of transmitted light intensity to exposing incident light intensity of not more than 30% and forming a photosensitive material film on the light-absorbing film. A selected region of the photosensitive material film is irradiated with the exposing incident light, and the photosensitive material film is developed to form a first pattern. The light-absorbing film is selectively etched using the first pattern as a mask so as to form a second pattern. Finally, the layer having the high reflectance is selectively etched using the second pattern as a mask.

REFERENCES:
patent: 2791504 (1957-05-01), Plambeck
patent: 4152159 (1979-05-01), Daly et al.
patent: 4261792 (1981-04-01), Tsuji et al.
patent: 4311773 (1982-01-01), Kaneko et al.
van den Berg and van Staden, "Antireflection Coatings on Metal Layers for Photolithographic Purposes", 3/1979, J. Appl. Phys. 50 (3).
Matsuyama, Igarashi, Majima and Orihara, "Fabrication of 3 um Bubble 80 kbit Chips", Fujitsu Laboratories Ltd., Kawasaki, Japan.
IBM Technical Disclosure Bulletin, vol. 14, No. 3, Aug. 1971, "Anti-interference and Antireflection Coatings for Chromium Masks".

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