Method for patterning films using reactive ion etching thereof

Details Method for patterning films using reactive ion etching thereof Method for patterning films using reactive ion etching thereof

1981-03-23

1982-08-10

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156644, 156646, 156652, 1566591, 156668, 204192E, 427 431, B44C 122, H01L 21306, C03C 1500, C23F 102

Patent

active

043436773

ABSTRACT:
In the patterning of an organic layer on a VLSI wafer by means of reactive oxygen (or other) ion anisotropic etching, build-ups of oxides (or other compounds) on the sidewalls of apertures formed in the organic layer are removed prior to etching the material, typically aluminum, of the VLSI wafer located at the bottom of these apertures, using the patterned organic layer as an etch mask.

REFERENCES:
patent: 3930913 (1976-01-01), Jacob
patent: 4092442 (1978-05-01), Agnihotri et al.
patent: 4244799 (1981-01-01), Fraser et al.
patent: 4256534 (1981-03-01), Levinstein et al.
Bell System Technical Journal, vol. 58, (1979) "High Resolution, Steep Profile, Resist Patterns", pp. 1027-1036, by J. M. Moran and D. Maydan.

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